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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DS90C032BTM датащи(PDF) 3 Page - National Semiconductor (TI) |
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DS90C032BTM датащи(HTML) 3 Page - National Semiconductor (TI) |
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3 / 9 page  Switching Characteristics V CC = +5.0V, TA = +25˚C (Notes 3, 4, 9) Symbol Parameter Conditions Min Typ Max Units t PHLD Differential Propagation Delay High to Low C L = 5 pF 1.5 3.40 5.0 ns t PLHD Differential Propagation Delay Low to High V ID = 200 mV 1.5 3.48 5.0 ns t SKD Differential Skew |t PHLD −tPLHD|(Figure 1 and Figure 2) 0 80 600 ps t SK1 Channel-to-Channel Skew (Note 5) 0 0.6 1.0 ns t TLH Rise Time 0.5 2.0 ns t THL Fall Time 0.5 2.0 ns t PHZ Disable Time High to Z R L = 2kΩ 10 15 ns t PLZ Disable Time Low to Z C L = 10 pF 10 15 ns t PZH Enable Time Z to High ( Figure 3 and Figure 4) 4 10 ns t PZL Enable Time Z to Low 410 ns Switching Characteristics V CC = +5.0V ± 10%,TA = −40˚C to +85˚C (Notes 3, 4, 9) Symbol Parameter Conditions Min Typ Max Units t PHLD Differential Propagation Delay High to Low C L = 5 pF 1.0 3.40 6.0 ns t PLHD Differential Propagation Delay Low to High V ID = 200 mV 1.0 3.48 6.0 ns t SKD Differential Skew |t PHLD −tPLHD|(Figure 1 and Figure 2) 0 0.08 1.2 ns t SK1 Channel-to-Channel Skew (Note 5) 0 0.6 1.5 ns t SK2 Chip to Chip Skew (Note 6) 5.0 ns t TLH Rise Time 0.5 2.5 ns t THL Fall Time 0.5 2.5 ns t PHZ Disable Time High to Z R L = 2kΩ 10 20 ns t PLZ Disable Time Low to Z C L = 10 pF 10 20 ns t PZH Enable Time Z to High ( Figure 3 and Figure 4) 4 15 ns t PZL Enable Time Z to Low 415 ns Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground unless otherwise speci- fied. Note 3: All typicals are given for: VCC = +5.0V, TA = +25˚C. Note 4: Generator waveform for all tests unless otherwise specified: f = 1 MHz, ZO = 50Ω,tr and tf (0%–100%) ≤ 1 ns for RIN and tr and tf ≤ 6 ns for EN or EN*. Note 5: Channel-to-Channel Skew is defined as the difference between the propagation delay of one channel and that of the others on the same chip with an event on the inputs. Note 6: Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays. Note 7: ESD Rating: HBM (1.5 k Ω, 100 pF) ≥ 2kV EIAJ (0 Ω, 200 pF) ≥ 250V Note 8: Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, do not ex- ceed maximum junction temperature specification. Note 9: CL includes probe and jig capacitance. Parameter Measurement Information DS100990-3 FIGURE 1. Receiver Propagation Delay and Transition Time Test Circuit www.national.com 3 |
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