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ACS770 датащи(PDF) 13 Page - Allegro MicroSystems |
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ACS770 датащи(HTML) 13 Page - Allegro MicroSystems |
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13 / 29 page ![]() Thermally Enhanced, Fully Integrated, Hall Effect-Based High Precision Linear Current Sensor IC with 100 µΩ Current Conductor ACS770xCB 13 Allegro MicroSystems, LLC 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com X200U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, CBYP = 0.1 μF, VCC= 5 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Unit Primary Sampled Current IP 0 – 200 A Sensitivity2 SensTA Measured using full scale IP, TA = 25°C 19.52 20 20.48 mV/A Sens(TOP)HT Measured using full scale IP, TOP = 25°C to 85°C 19.52 20 20.48 mV/A Sens(TOP)LT Measured using full scale IP, TOP = –40°C to 25°C 19.3 20 20.7 mV/A Sensitivity Drift Over Lifetime3 ΔSensLIFE TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualification testing –0.36 ±0.12 0.36 mV/A Noise4 VNOISE TA= 25°C, 10 nF on VIOUT pin to GND – 6 – mV Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 % Electrical Offset Voltage5,6 VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C –10 ±6 10 mV VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV Electrical Offset Voltage Drift Over Lifetime3 ∆VOE(LIFE) IP = 0 A, TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualification testing –5 ±2 5 mV Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 250 575 mA Total Output Error7 ETOT(TA) Measured using full scale IP, TA = 25°C –2.4 ±0.5 2.4 % ETOT(HT) Measured using full scale IP, TOP = 25°C to 85°C –2.4 ±1.5 2.4 % ETOT(LT) Measured using full scale IP, TOP = –40°C to 25°C –3.5 ±2 3.5 % Total Output Error Drift Over Lifetime3 ΔETOT(LIFE) TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualification testing –1.9 ±0.6 1.9 % 1 See Characteristic Performance Data page for parameter distributions over temperature range. 2 This parameter may drift a maximum of ΔSensLIFE over lifetime. 3 Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information. 4 ±3 sigma noise voltage. 5 Drift is referred to ideal VIOUT(QBI) = 0.5 V. 6 This parameter may drift a maximum of ΔVOE(LIFE) over lifetime. 7 This parameter may drift a maximum of ΔETOT(LIFE) over lifetime. |
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