A4910_16 datasheet(10/36 Pages) ALLEGRO

10 / 36 page

Automotive 3-Phase MOSFET Driver

A4910

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

PROTECTION

VREG Undervoltage Lockout

VREGON VREG rising

7.6

7.95

8.2

VREGOFF VREG falling

6.9

7.18

7.4

Bootstrap Undervoltage

VBOOTUV Cx with respect to Sx

–

%VREG

Bootstrap Undervoltage Hysteresis

VBOOTUVhys

–

%VREG

VDD Undervoltage Turn Off

VDDUV

VDD falling

2.45

2.7

2.85

VDD Undervoltage Hysteresis

VDDUVhys

100

150

VDS Threshold

VDSTH

Default power–up level

–

800

–

VBRG Input Voltage

VBRG

5.5

VBB

VBRG Input Current

IVBRG

VDSTH = 2 V, VBB = 12 V, 0 V < VBRG < VBB

–

250

µA

IVBRGQ

RESETn = low, sleep mode, VBB = 12 V

–

µA

Short-to-Ground Threshold Offset4

VSTGO

VDSTH ≥ 1 V, VBB > 7 V

–

±100

–

VDSTH < 1 V

–150

±50

+150

Short-to-Battery Threshold Offset5

VSTBO

VDSTH ≥ 1 V, VBB > 7 V

–

±100

–

VDSTH < 1 V

–150

±50

+150

Fault Blanking Time

tBL

Default power–up state

2.8

3.2

3.6

µs

DIAG Output Clock Division Ratio

DIAG[1..0] = 01

–

409600

–

DIAG Output Temperature Offset6

VTJD

DIAG[1..0] = 11

–

1420

–

DIAG Output Temperature Slope6

ATJD

DIAG[1..0] = 11

–

–3.85

–

mV/°C

DIAG output VDS Threshold Error

VDSE

DIAG[1..0] = 10

–10

–

Hot Temperature Warning Threshold

TJWH

Temperature increasing

125

135

145

°C

Hot Temperature Warning Hysteresis

TJWHhys

–

°C

Overtemperature Flag

TJF

Temperature increasing

155

170

–

°C

Overtemperature Hysteresis

TJhys

Recovery = TJF – TJhys

–

°C

For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device terminal.

VOZ = 0.5 V unless otherwise specified.

Confirmed by design and characterization.

With high-side on; as VSx decreases, fault occurs if VBAT – VSx > VSTG, given Short-to-Ground Threshold: VSTG = VDSTH + VSTGO.

With low-side on; as VSx increases, fault occurs if VSx – VLSSx >VSTB, given Short-to-Battery Threshold: VSTB = VDSTH + VSTBO.

TJ ≈ (VDIAG – VTJD) / ATJD where TJ is junction temperature in °C, VDIAG is voltage measured on the DIAG pin in mV, VTJD is temperature offset in mV,

and ATJD is temperature slope in mV/°C.

ELECTRICAL CHARACTERISTICS (continued): Valid at TJ = –40°C to 150°C, VDD = 5 V, VBB = 5.5 to 50 V, unless otherwise specified

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

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