PARAMETER

Collector-Base breakdown voltage

FMBTA55

FMBTA56

CONDITIONS

SYMBOL

V

(BR)CBO

Min.

-60

-80

UNIT

Vdc

Vdc

Electrical

o

A

Off Characteristics

I = -100µAdc, I = 0

c

E

PARAMETER

DC current gain

CONDITIONS

SYMBOL

h

FE

100

UNIT

Vdc

On Characteristics

I = -10mAdc, V

= -1.0Vdc

c

CE

I = -100mAdc, V

= -1.0Vdc

c

CE

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

I = -100mAdc, I = -10mAdc

c

B

Vdc

V

CE(sat)

V

BE(on)

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Max.

Collector Cutoff current

FMBTA55

FMBTA56

V

= -60Vdc, I = 0

CB

E

V

= -80Vdc, I = 0

CB

E

-0.1

-4.0

I

CBO

µAdc

Formosa MS

Collector-Emitter

voltage(3)

breakdown

FMBTA55

FMBTA56

I = -1.0mAdc, I = 0

c

B

V

CEO

(BR)

-60

-80

Emitter-Base

voltage

breakdown

V

EBO

(BR)

I = -100µAdc, I = 0

E

C

Vdc

µAdc

Min.

Max.

100

Collector Cutoff Current

V =-60Vdc, IB=0

CE

I

CES

-0.1

-0.1

-0.25

I = -100mAdc, V

= -1.0Vdc

c

CE

-1.2

-

Small Signal Characteristics

PARAMETER

Current Gain Bandwidth Product (4)

CONDITIONS

SYMBOL

f

T

UNIT

I = -100mA, V

= -1.0Vdc,

c

CE

f=100MHz

Min.

Max.

50

MHz

Document ID

Issued Date

Revised Date

Revision

Page.

FMBTA55 / FMBTA56

Driver Transistor

3. Pulse test: pulse width <=300µs, duty cycle<=2.0%

-

-

-

-

-

-

-

-

-

-

-

-

-

DS-231164

2010/11/05

2011/07/21

B

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