MS34P01

-30V(D-S) P-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MS34P01]

Switching Characteristics (Note 4)

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Turn-on Delay Time

--

7

--

ns

Turn-on Rise Time

--

3

--

ns

Turn-Off Delay Time

--

30

--

ns

tf

Turn-Off Fall Time

--

12

--

ns

Total Gate Charge

--

9.5

--

nC

Gate-Source Charge

--

2

--

nC

Gate-Drain Charge

--

3

--

nC

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Diode Forward Voltage (Note 3)

--

--

-1.2

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production