Data Sheet No. PD60045-N

Typical Connection

Product Summary

600V max.

130 mA / 270 mA

10 - 20V

680 & 150 ns

Deadtime (typ.)

520 ns

HALF-BRIDGE DRIVER

Features

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

Description

The IR2103(S) are high voltage, high speed power

MOSFET and IGBT drivers with dependent high and

low side referenced output channels. Proprietary HVIC

and latch immune CMOS technologies enable rug-

gedized monolithic construction. The logic input is

compatible with standard CMOS or LSTTL output,

down to 3.3V logic. The output drivers feature a high

Packages

8-Lead SOIC

IR2103S

8-Lead PDIP

IR2103

pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to

drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

www.irf.com

1

V

CC

V

B

V

S

HO

LO

COM

HIN

LIN

LIN

HIN

up to 600V

TO

LOAD

V

CC

(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.

Please refer to our Application Notes and DesignTips for proper circuit board layout.