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MCP1406-E/AT датащи(PDF) 6 Page - Microchip Technology |
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MCP1406-E/AT датащи(HTML) 6 Page - Microchip Technology |
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6 / 30 page ![]() MCP1406/07 DS20002019C-page 6 2006-2016 Microchip Technology Inc. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA -65 — +150 °C Package Thermal Resistances Junction-to-Ambient Thermal Resistance, 8-L 6x5 DFN JA —31.8 — °C/W Note 1 Junction-to-Ambient Thermal Resistance, 8-L PDIP JA —65.2 — °C/W Note 1 Junction-to-Ambient Thermal Resistance, 8-L SOIC JA —96.3 — °C/W Note 1 Junction-to-Ambient Thermal Resistance, 5-L TO-220 JA —20.1 — °C/W Note 1 Junction-to-Case (Bottom) Thermal Resistance, 5-L TO-220 JC(BOT) 3.2 — °C/W Note 2 Junction-to-Top Characterization Parameter, 8-L 6x5 DFN JT 0.2 — °C/W Note 1 Junction-to-Top Characterization Parameter, 8-L PDIP JT 8.8 — °C/W Note 1 Junction-to-Top Characterization Parameter, 8-L SOIC JT 3.2 — °C/W Note 1 Junction-to-Top Characterization Parameter, 5-L TO-220 JT 3.6 — °C/W Note 1 Junction-to-Board Characterization Parameter, 8-L 6x5 DFN JB 15.5 — °C/W Note 1 Junction-to-Board Characterization Parameter, 8-L PDIP JB 36.1 — °C/W Note 1 Junction-to-Board Characterization Parameter, 8-L SOIC JB 60.7 — °C/W Note 1 Junction-to-Board Characterization Parameter, 5-L TO-220 JB 4.0 — °C/W Note 1 Note 1: Parameter is determined using a High 2S2P 4-layer board, as described in JESD 51-7, as well as in JESD 51-5, for packages with exposed pads. 2: Parameter is determined using a 1S0P 2-layer board with a cold plate attached to indicated location. |
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