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MCP1700 датащи(PDF) 13 Page - Microchip Technology |
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MCP1700 датащи(HTML) 13 Page - Microchip Technology |
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13 / 28 page ![]() 2005-2013 Microchip Technology Inc. DS20001826C-page 13 MCP1700 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 Typical Application The MCP1700 is most commonly used as a voltage regulator. Its low quiescent current and low dropout voltage make it ideal for many battery-powered applications. FIGURE 6-1: Typical Application Circuit. 6.1.1 APPLICATION INPUT CONDITIONS 6.2 Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1700 is a function of input voltage, output voltage and output current. The power dissipation resulting from the quiescent current draw is so low it is insignificant (1.6 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: The maximum continuous operating junction temperature specified for the MCP1700 is +125°C. To estimate the internal junction temperature of the MCP1700, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R JA). The thermal resistance from junction to ambient for the SOT-23 pin package is estimated at 230°C/W. EQUATION 6-2: The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the maximum internal power dissipation of the package. EQUATION 6-3: EQUATION 6-4: Package Type = SOT-23 Input Voltage Range = 2.3V to 3.2V VIN maximum = 3.2V VOUT typical = 1.8V IOUT = 150 mA maximum GND VOUT VIN CIN 1µF Ceramic COUT 1µF Ceramic VOUT VIN (2.3V to 3.2V) 1.8V IOUT 150 mA MCP1700 P LDO V IN MAX V OUT MIN – I OUT MAX = PLDO = Internal power dissipation of the LDO Pass device VIN(MAX) = Maximum input voltage VOUT(MIN) = Minimum output voltage of the LDO T JMAX P TOTAL R JA T AMAX + = TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total power dissipation of the device R JA = Thermal resistance from junction to ambient TA(MAX) = Maximum ambient temperature P DMAX T JMAX T AMAX – R JA --------------------------------------------------- = PD(MAX) = Maximum power dissipation of the device TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature R JA = Thermal resistance from junction to ambient T JRISE P DMAX R JA = TJ(RISE) = Rise in the device’s junction temperature over the ambient temperature PTOTAL = Maximum power dissipation of the device R JA = Thermal resistance from junction to ambient |
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