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2SC1623 датащи(PDF) 2 Page - Bruckewell Technology LTD

номер детали 2SC1623
подробное описание детали  Silicon PNP Epitaxial Type Transistor
PDF  4 Pages
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производитель  BWTECH [Bruckewell Technology LTD]
домашняя страница  http://www.bruckewell-semi.com
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2SC1623 датащи(HTML) 2 Page - Bruckewell Technology LTD

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2SC1623
Silicon PNP Epitaxial Type Transistor
Publication Order Number: [2SC1623]
© Bruckewell Technology Corporation Rev. A -2014
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATING @ Ta=25°C unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
100
mA
PC
Collector Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC = 100μA , IE = 0
60
V
V(BR)CEO
Collector-emitter breakdown
voltage
IC = 1mA , IB = 0
50
V
V(BR)EBO
Emitter-base breakdown voltage
IE = 100μA , IC = 0
5
V
ICBO
Collector cut-off current
VCB = 60 V , IE = 0
uA
IEBO
Emitter cut-off current
VEB = 5 V , IC = 0
uA
hFE
DC current gain
VCE = 6 V , IC = 1 mA
90
200
600
VCE(sat)
Collector-emitter saturation voltage
IC = 100mA , IB = 10mA
0.15
0.3
V
VBE(sat)
Base-emitter saturation voltage
IC = 100mA , IB = 10mA
0.86
1.0
V
VBE
Base Emitter Voltage
VCE = 6 V , IC = 1 mA
0.55
0.62
0.65
V
fT
Transition frequency
VCE = 6 V , IE = -10 mA
250
MHz
Cob
Output capacitance
VCB = 6 V , IE = 0
f = 1.0MHz
3.0
pF
CLASSIFICATION OF hFE(1)
Rank
L4
L5
L6
L7
Range
90-180
135-270
200-400
300-600
Marking
L4
L5
L6
L7



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