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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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1SS404 датащи(PDF) 1 Page - Diode Semiconductor Korea |
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1SS404 датащи(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page  Silicon Epitaxial Planar Diode 1SS404 FEATURES Small surface mounting type. High speed. High reliability with high surge current handing capability APPLICATIONS SOD-323 High speed switching ORDERING INFORMATION Type No. Marking Package Code 1SS404 S51 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage VRM 25 V DC Reverse Voltage VR 20 V Peak forward Current IFM 700 mA Average Rectified Output Current IO 300 mA Power Dissipation PD 200 mW Junction temperature Tj 125 ℃ Storage temperature TSTG -55~+125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. TYP. Max. Unit Conditions Forward voltage VF 0.16 0.22 0.38 0.45 V IF=1mA IF=10mA IF=300mA Reverse current IR 50 μA VR=20V Capacitance between terminals CT 46 pF VR=0V,f=1MHz Pb Lead-free Diode Semiconductor Korea www.diode.kr |
Аналогичный номер детали - 1SS404 |
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Аналогичное описание - 1SS404 |
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ссылки URL |
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