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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLML6401 датащи(PDF) 2 Page - International Rectifier |
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IRLML6401 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLML6401 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V trr Reverse Recovery Time ––– 22 33 ns TJ = 25°C, IF = -1.3A Qrr Reverse RecoveryCharge ––– 8.0 12 nC di/dt = -100A/µs Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics -1.3 -34 A S D G Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 3.5mH RG = 25Ω, IAS = -4.3A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.050 VGS = -4.5V, ID = -4.3A RDS(on) Static Drain-to-Source On-Resistance ––– 0.085 VGS = -2.5V, ID = -2.5A ––– 0.125 VGS = -1.8V, ID = -2.0A VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.6 ––– ––– S VDS = -10V, ID = -4.3A ––– ––– -1.0 VDS = -12V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V Qg Total Gate Charge ––– 10 15 ID = -4.3A Qgs Gate-to-Source Charge ––– 1.4 2.1 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.6 3.9 VGS = -5.0V td(on) Turn-On Delay Time ––– 11 ––– VDD = -6.0V tr Rise Time ––– 32 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 250 ––– RD = 6.0Ω tf Fall Time ––– 210 ––– RG = 89Ω Ciss Input Capacitance ––– 830 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω IDSS Drain-to-Source Leakage Current nA ns |
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