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FDB101S датащи(PDF) 1 Page - Diode Semiconductor Korea

номер детали FDB101S
подробное описание детали  SILICON BRIDGE RECTIFIERS
PDF  2 Pages
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производитель  DSK [Diode Semiconductor Korea]
домашняя страница  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

FDB101S датащи(HTML) 1 Page - Diode Semiconductor Korea

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1.2± 0.3
1± 0.1
8.3± 0.1
5± 0.2
6.4± 0.1
7.9± 0.2
10± 0.6
FEATURES
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
94V-O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FDB
103S
FDB
104S
FDB
105S
FDB
106S
FDB
107S
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forw ard
Output current
@T
A=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
VF
V
Maximum reverse current
@T
A=25
μA
at rated DC blocking voltage @T
A=100
mA
Operating junction temperature range
TJ
Storage temperature range
TSTG
FDB
101S
FDB
102S
50
100
1.3
1.0
30.0
IFSM
FDB101S --- FDB107S
A
10.0
Lead solderable per MIL-STD-202 method 208
IF(AV)
1.0
SILICON BRIDGE RECTIFIERS
Lead: silver plated copper, solderde plated
A
- 55 ---- + 150
- 55 ---- + 125
IR
100
70
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
1.0 A
35
5
0
DB - S
Plastic material has UL flammability classification
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
Dimensions in millimeters
Maximum reverse recovery time (Note1)
t rr
150
250
500
ns
NOTE:1. Measured with I
F=0.5A,IR=1A, I
rr=0.25A.
Diode Semiconductor Korea
www.diode.kr


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