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TLV5580IPWR датащи(PDF) 14 Page - Texas Instruments |
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TLV5580IPWR датащи(HTML) 14 Page - Texas Instruments |
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14 / 38 page ![]() TLV5580 8BIT, 80 MSPS LOW POWER A/D CONVERTER SLAS205B − DECEMBER 1998 − REVISED OCTOBER 2003 www.ti.com 14 PRINCIPLE OF OPERATION The TLV5580 implements a high-speed 80 MSPS converter in a cost-effective CMOS process. Powered from 3.3 V, the single-pipeline design architecture ensures low-power operation and 8 bit accuracy. Signal input and clock signals are all single-ended. The digital inputs are 3.3 V TTL / CMOS compatible. Internal voltage references are included for both bottom and top voltages. Therefore the converter forms a self-contained solution. Alternatively the user may apply externally generated reference voltages. In doing so, both input offset and input range can be modified to suit the application. A high-speed sampling-and-hold captures the analog input signal. Multiple stages will generate the output code with a pipeline delay of 4.5 CLK cycles. Correction logic combines the multistage data and aligns the 8-bit output word. All digital logic operates at the rising edge of CLK. ANALOG INPUT AIN CI S1 RSW RS VS TLV5580 Figure 12. Simplified Equivalent Input Circuit A first-order approximation for the equivalent analog input circuit of the TLV5580 is shown in Figure 12. The equivalent input capacitance CI is 4 pF typical. The input must charge/discharge this capacitance within the sample period of one half clock cycle. When a full-scale voltage step is applied, the input source provides the charging current through the switch resistance RSW (200 Ω) of S1 and quickly settles. In this case the input impedance is low. Alternatively, when the source voltage equals the value previously stored on CI, the hold capacitor requires no input current and the equivalent input impedance is very high. To maintain the frequency performance outlined in the specifications, the total source impedance should be limited to about 80 Ω, as follows from the equation with fCLK = 80 MHz, CI = 4 pF, RSW = 200 Ω: R S t 1 ÷ 2f CLK C I In(256) –R SW So, for applications running at a lower fCLK, the total source resistance can increase proportionally. |
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