6.9± 0.25

1.

3± 0. 25

7.8± 0. 2

0.25± 0.06

FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC

SMC,molded plastic

Terminals:

Solderable per

MIL- STD-202,

method 208

Polarity: Color band denotes cathode

Weight: 0.

007 ounces,0.21 grams

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard rectified current

@T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

@T

Maximum instantaneous forw ard voltage @ 3.0A

(Note 1)

@ 9.4A

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical junction capacitance

(Note2)

pF

Typical thermal resistance

(Note3)

/W

Operating junction temperature range

Storage temperature range

S5820---S5822

A

For use in low voltage,high frequency inverters free

VOLTAGE RANGE: 20 --- 40 V

CURRENT: 3.0 A

SMC(DO-214AB)

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

S5820

3.Thermal resistance junction to ambient

mA

NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

A

20

- 55 ---- + 125

- 55 ---- + 150

80.0

250

3.0

20.0

2.0

40

0.525

0.95

0.50

V

0.90

0.475

0.85

S5821

S5822

40

28

30

21

30

20

14

20

SCHOTTKY BARRIER RECTIFIERS

SURFACE MOUNT

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr