3.4

+0.3

-0.1

0.4±0.1

Cathode indification

FEATURES

ABSOLUTE RATINGS

Power dissipation on printed

Pc

mW

Repetitive peak on-state

tp=20

S

current

f=120Hz

A

Operating junction temperature

Storage temperature

Min

28

35

Typ

32

40

Max

36

45

Min

V

Max

A

Typ

S

Max

A

2. Connected in parallel w ith the devices

NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.

5.0

5.0

100.0

1.5

V

See FIG.1

10.0

Breakover voltage symmetry

UNITS

150.0

I±

VI

See FIG.1

See FIG.1

V

V

±3.0

V

Parameters

Symbols

UNITS

DB3M,DB4M

DB3M.DB4M

VOLTAGE RANGE: 28-45 V

SILICON BIDIRECTIONAL DIACS

MINI-MELF

The three layer,two termnal,hermetically sealed diacs

are designed specifically for triggering thyristors.

They demonstrate low break over current at break

over voltage as they withstand peak pulse current,

The breakover symmetry is within three volts(DB6).

These diacs are intended for use in thyrisitors

phase control,circuits for lamp dimming,universal

motor speed control,and heat control.

Parameters

See FIG.3

2.0

-40--- +125

See FIG.1

ELECTRICAL CHARACTERISTICS

Test Conditions

-40--- +125

DB3M

DB4M

See FIG.2

Max

Min

Dimensions in millimeters

www.diode.kr

Diode Semiconductor Korea