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BAS85 датащи(PDF) 1 Page - Diode Semiconductor Korea |
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BAS85 датащи(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() 3.4 +0.3 -0.1 0.4± 0.1 Cathode indification FEATURES For general purpose applications This diode features very low turn-on voltage and fast switching. Thes e devices are protected MECHANICAL DATA Case:JEDEC mini-melf,glas s cas e Weight: Approx.0.031 grams Symbols Min. UNITS 30.0 V V V V V V A pF ns /W 0.4 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 0.5 Thermal resistance junction to ambient CJ 0.32 Pulse test tp<300 s, <2% @ IF=0.1mA @ IF=1mA Storage temperature range TSTG Reverse breakdow n voltage Symbols VR 0.24 @ IF=10mA @ IF=30mA IR BAS85 by a PN junction guard ring against exces sive SMALL SIGNAL SCHOTTKY DIODE VOLTAGE RANGE: 30 V CURRENT: 0.2 A Mini-melf voltage, such as electrostatic discharges Pow er dissipation @ TA=65 UNITS c-55 ---+ 125 Polarity: Color band denotes cathode end ABSOLUTE RATINGS VR IF IFM IFSM Ptot TJ TA 5 1) 125 V mA mA 30.0 200 1) 300 1) A mW Max. Typ. c-55 ---+ 150 ELECTRICAL CHARACTERISTICS Junction temperature Ambient operating temperature range RθJA @ IF=100mA Leakage current VR=25V Junction capacitance at VR=1V,f=1MHz Reverse recovery time @ IF=10mA,IR=10mA,IR=1mA VF Forw ard voltage 2.0 10 trr 5 430 1) Value 200 1) 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature Continuous reverse voltage Forw ard continuous current @ TA=25 Peak forw ard current @ TA=25 Surge forw ard current @ tp<1s,TA=25 0.8 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
Аналогичный номер детали - BAS85 |
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Аналогичное описание - BAS85 |
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