MMBD352 datasheet(1/3 Pages) DSK

номер детали	MMBD352

подробное описание детали	Dual Hot Carrier Mixer Diodes

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производитель	DSK [Diode Semiconductor Korea]

домашняя страница	http://www.diode.kr/

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Dual Hot Carrier Mixer Diodes

MMBD352/353/354/355

FEATURES

Very low capacitance—

Less than 1.0pF@zero V.

Low forward voltage—IF=10mA.

MMBD352

MMBD353

Power dissipation Pd=300mW

Pb-Free package is available.

APPLICATIONS

MMBD354

MMBD355

Designed primarily for UHF mixer

applications.

SOT-23

ORDERING INFORMATION

Type No.

Marking

Package Code

MMBD352

M5G

SOT-23

MMBD353

M4F

SOT-23

MMBD354

M6H

SOT-23

MMBD355

MJ1

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Continuous reverse voltage

VR

7.0

V

Power Dissipation

Pd

300

mW

Thermal Resistance,Junction-to-Ambient

RθJA

417

℃

/W

Junction and storage temperature

TJ,TSTG

-55-150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse Breakdown Voltage

V(BR)

7.0

V

IR=100μA

Forward voltage

VF

0.60

V

IF=10mA

Reverse current

IR

0.25

10

μA

VR=3.0V

VR=7.0V

Diode Capacitanc

CD

1.0

pF

VR=0V,f=1MHz

Pb

Lead-free

Diode Semiconductor Korea

www.diode.kr

Аналогичный номер детали - MMBD352

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MMBD352	41Kb / 4P	Dual Hot Carrier Mixer Diodes November, 2001 ??Rev. 4
Leshan Radio Company	MMBD352	45Kb / 2P	Dual Hot Carrier Mixer Diodes
Leshan Radio Company	MMBD352	48Kb / 2P	Dual Schottky Barrier Diode
Pan Jit International I...	MMBD352	84Kb / 3P	SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
Pan Jit International I...	MMBD352	133Kb / 3P	SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

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Аналогичное описание - MMBD352

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MMBD352LT1	41Kb / 4P	Dual Hot Carrier Mixer Diodes November, 2001 ??Rev. 4
Leshan Radio Company	MMBD352LT1	45Kb / 2P	Dual Hot Carrier Mixer Diodes
Motorola, Inc	MMBD352LT1	60Kb / 4P	Dual Hot Carrier Mixer Diodes
ON Semiconductor	MMBD352LT1	93Kb / 3P	Dual Hot Carrier Mixer Diodes September, 2006 ??Rev. 6
ON Semiconductor	MMBD352LT1G	122Kb / 3P	Dual Hot Carrier Mixer Diodes August, 2009 ??Rev. 7
Shenzhen Luguang Electr...	MMBD352	237Kb / 2P	Dual Hot Carrier Mixer Diodes
Shenzhen Luguang Electr...	MMBD452	241Kb / 2P	Dual Hot Carrier Mixer Diodes
ON Semiconductor	MMBD352LT1G	127Kb / 3P	Dual Hot Carrier Mixer Diodes October, 2016 ??Rev. 9
ON Semiconductor	MMBD452LT1G	123Kb / 3P	Dual Hot-Carrier Diodes October, 2016 ??Rev. 5
Shenzhen Luguang Electr...	MMBD452	1Mb / 2P	Dual Hot Carrier Mixer Diodes

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MMBD352 датащи(PDF) 1 Page - Diode Semiconductor Korea

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