1

3

2

PIN

10.2± 0.2

4.0± 0.3

2.6± 0.15

1.4± 0.1

0.6± 0.1

4.5± 0.2

3.1

+0.2

-0.1

2.6± 0.2

0.6± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard total device

A

Peak forw ard surge current 8.3ms single half

A

Maximum forward

voltage

(I

)

(Note 1)

(I

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance from junction to case.

m A

30

35

40

45

50

60

90

100

1

0

125

21

25

28

32

35

42

63

70

30

35

40

45

50

60

90

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 10 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC ITO-220AB,molded plastic body

SCHOTTKY BARRIER RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

0.1

6.8

4.4

ITO-220AB

MBRF1030CT---MBRF10100CT

MBRF

MBRF

MBRF

MBRF MBRF

MBRF

MBRF MBRF

1

030CT 1035CT 1040CT 1045CT 1050CT 1060CT 1090CT 10100CT

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.06ounce, 1.67 grams

15

6.0

V

0.70

0.84

0.70

-

0.80

0.85

0.57

0.95

-

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

3)

Diode Semiconductor Korea

www.diode.kr