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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BUW51 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW51 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor BUW51 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain APPLICATIONS ·Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage (VBE= -1.5V) 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 28 A IB Base Current-Continuous 4 A IBM Base Current-peak 7 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W |
Аналогичный номер детали - BUW51 |
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Аналогичное описание - BUW51 |
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ссылки URL |
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