BUV46AFI datasheet(1/2 Pages) ISC

номер детали	BUV46AFI

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

BUV46AFI

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 450V(Min.)

·High Speed Switching

APPLICATIONS

·Designed for high voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage VBE= 0

1000

V

VCEX

Collector-Emitter Voltage

VBE= -2.5V

1000

V

VCEO

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

IB

Base Current-Continuous

3

A

PC

Collector Power Dissipation

@TC=25℃

30

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

4.12

℃/W

Аналогичный номер детали - BUV46AFI

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	BUV46A	115Kb / 3P	POWER TRANSISTORS(6A,400-450V,70W)
STMicroelectronics	BUV46A	47Kb / 4P	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Jan-1999
Advanced Analogic Techn...	BUV46A	74Kb / 1P	POWER TRANSISTORS
Savantic, Inc.	BUV46A	96Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	BUV46A	82Kb / 3P	Silicon Power Transistor

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Аналогичное описание - BUV46AFI

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