 2015 Microchip Technology Inc.

DS20005410A-page 3

DN2470

1.0

ELECTRICAL CHARACTERISTICS

Gate-to-source voltage................................................................................................................................................................... ±20V

Operating and storage temperature............................................................................................................................. -55°C to +150°C

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.

2: Specification is obtained by characterization and is not 100% tested.

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC AND AC CHARACTERISTICS

Parameter

Symbol

Min

Typ

Max

Units Conditions

DC Parameters (Note 1, unless otherwise stated)

Drain-to-source breakdown voltage

700

–

–

V

Gate-to-source off voltage

-1.5

–

-3.5

V

ture

–

–

-4.5

Gate body leakage current

–

–

100

nA

Drain-to-source leakage current

––

1.0

µA

––

1.0

mA

Saturated drain-to-source current

–500

-

mA

Static drain-to-source on-state

resistance

––

42

Ω

––

1.1

AC Parameters (Note 2)

Forward transconductance

100

–

–

Input capacitance

–

–

540

pF

f = 1.0 MHz

Common source output capaci-

tance

––

60

Reverse transfer capacitance

––

25

Turn-on delay time

––

30

ns

Rise time

––

45

Turn-off delay time

––

45

Fall time

––

60

Diode Parameters

Diode forward voltage drop

––

1.8

V

Reverse recovery time

–800

–

ns