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DS20005451A-page 1

DN2530

Features

• High-input impedance

• Low-input capacitance

• Fast switching speeds

• Low on-resistance

• Free from secondary breakdown

• Low input and output leakage

Applications

• Normally-on switches

• Solid state relays

•Converters

• Linear amplifiers

• Constant current sources

• Power supply circuits

• Telecom

Description

The DN2530 is a low-threshold, depletion-mode, nor-

mally-on transistor that utilizes an advanced vertical

DMOS structure and a well-proven silicon-gate manu-

facturing process. This combination produces a device

with the power-handling capabilities of bipolar transis-

tors, plus the high-input impedance and positive-tem-

perature

coefficient

inherent

in

Metal-Oxide

Semiconductor (MOS) devices. Characteristic of all

MOS structures, this device is free from thermal run-

away and thermally-induced secondary breakdown.

Vertical DMOS Field-Effect Transistors (FETs) are ide-

ally suited to a wide range of switching and amplifying

applications where high breakdown-voltage, high-input

impedance, low-input capacitance, and fast switching

speeds are desired.

Package Types

TO-92

See Table 2-1 for pin information

TO-243AA (SOT-89)

GATE

SOURCE

DRAIN

GATE

SOURCE

DRAIN

DRAIN

N-Channel, Depletion-Mode, Vertical DMOS FET