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TDA8591 датащи(PDF) 13 Page - NXP Semiconductors

номер детали TDA8591
подробное описание детали  4 X 44 W into 4 or 4 X 75 W into 2 quad BTL car radio power amplifier
PDF  36 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA8591 датащи(HTML) 13 Page - NXP Semiconductors

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2002 Jan 14
13
Philips Semiconductors
Preliminary specification
4
× 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
TDA8591J
8
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Human body model: C = 100 pF; Rs = 1500 Ω; all pins have passed all tests to 2500 V to guarantee 2000 V,
according to
“General Quality Specification SNW-FQ-611D”, class II, except pin GND, which passed 2200 V,
class Ia.
2. Machine model: C = 200 pF; Rs =10 Ω; L = 0.75 mH.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
operating
−
18
V
not operating
−1
+45
V
with load dump protection (see Fig.10)
−
45
V
VDIAG
voltage on pin DIAG
−
45
V
IOSM
non-repetitive peak output
current
−
10
A
IORM
repetitive peak output current
−
6A
Vsc
AC and DC short-circuit voltage
short-circuit of output pins across
loads and to ground or supply
−
18
V
Vrp
reverse polarity voltage
t
≤ 1ms
−
6V
Ptot
total power dissipation
Tcase =70 °C
−
80
W
Tvj
virtual junction temperature
−
150
°C
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
Vesd
electrostatic handling voltage
note 1
2000
−
V
note 2
200
−
V
handbook, halfpage
MGT601
VP
(V)
45
tr
>2.5 ms
tf
>47.5 ms
t
14.4
Fig.10 Load dump pulse definition.



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