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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SST174 датащи(PDF) 1 Page - Linear Integrated Systems |
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SST174 датащи(HTML) 1 Page - Linear Integrated Systems |
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1 / 2 page  FEATURES Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ≤ 85Ω LOW GATE OPERATING CURRENT ID(off) = 10pA ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 135°C Maximum Power Dissipation Continuous Power Dissipation 350mW Maximum Currents Gate Current IG = -50mA Maximum Voltages Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 IG = 1µA, VDS = 0V VGS(F) Gate to Source Forward Voltage -0.7 V IG = -1mA, VDS = 0V IGSS Gate Reverse Current 0.01 1 VGS = 20V, VDS = 0V IG Gate Operating Current 0.01 VDG = -15V, ID = -1mA ID(off) Drain Cutoff Current -0.01 -1 nA VDS = -15V, VGS = 10V SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) J/SST174 J/SST175 J/SST176 J/SST177 SYMBOL CHARACTERISTIC MIN MAX MIN MAX MIN MAX MIN MAX UNITS CONDITIONS VGS(off) Gate to Source Cutoff Voltage 5 10 3 6 1 4 0.8 2.25 V VDS = -15V, ID = -10nA IDSS Drain to Source Saturation Current -20 -135 -7 -70 -2 -35 -1.5 -20 mA VDS = -15V, VGS = 0V rDS(on) Drain to Source On Resistance 85 125 250 300 Ω VGS = 0V, VDS = -0.1V SST SERIES 1 2 3 SOT-23 TOP VIEW D G S J SERIES TO-92 BOTTOM VIEW 123 DG S Linear Integrated Systems J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 |
Аналогичный номер детали - SST174 |
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Аналогичное описание - SST174 |
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