MCP2551ESLASHP datasheet(9/20 Pages) MICROCHIP

9 / 20 page

 2002 Microchip Technology Inc.

Preliminary

DS21667C-page 9

MCP2551

FIGURE 2-2:

TEST CIRCUIT FOR ELECTRICAL CHARACTERISTICS

Bus Line (CANH; CANL) Receiver: [TXD = 2V; pins 6 and 7 externally driven]

D22

RDIFF

Differential input resistance

100

Ω

D24

ILI

CANH, CANL input leakage

current

—150

µA

VDD < VPOR;

VCANH = VCANL = +5V

Transmitter Data Input (TXD):

D25

VIH

High-level input voltage

2.0

—

Output recessive

D26

VIL

Low-level input voltage

—

+0.8

Output dominant

D27

IIH

High-level input current

-1

µA

VTXD = VDD

D28

IIL

Low-level input current

-100

-400

µA

VTXD = 0V

Receiver Data Output (RXD):

D31

VOH

High-level output voltage

0.7

—

IOH = 8 mA

D32

VOL

Low-level output voltage

—

0.8

IOL = 8 mA

Voltage Reference Output (VREF):

D33

VREF

Reference output voltage

0.45 VDD

0.55 VDD

V-50 µA < IVREF < 50 µA

Standby/Slope-Control (RS pin):

D34

VSTB

Input voltage for standby mode

0.75 VDD

—V

D35

ISLOPE

Slope-control mode current

-10

-200

µA

D36

VSLOPE

Slope-control mode voltage

0.4 VDD

0.6 VDD

Thermal Shutdown:

D37

TJ(sd)

Shutdown junction temperature

155

180

Note 1

D38

TJ(h)

Shutdown temperature

hysteresis

-12V < V(CANL, CANH) < +12V

(Note 3)

2.2

DC Characteristics (Continued)

DC Specifications (Continued)

Electrical Characteristics:

Industrial (I): TAMB = -40°C to +85°C VDD = 4.5V to 5.5V

Extended (E): TAMB = -40°C to +125°C VDD = 4.5V to 5.5V

Param

No.

Sym

Characteristic

Min

Max

Units

Conditions

Note 1: This parameter is periodically sampled and not 100% tested.

2: ITXD = IRXD = IVREF = 0 mA; 0V < VCANL < VDD; 0V < VCANH < VDD; VRS = VDD.

3: This is valid for the receiver in all modes, High-Speed, Slope-Control and standby.

Rext

GND

RXD

VREF

TXD

Ω

100 pF

30 pF

CANH

CANL

CAN

Transceiver

Note:

RS may be connected to VDD or GND via a load resistor depending on desired operating mode

as described in Section 1.7.8, “Slope Resistor Input”.

0.1µF

VDD

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