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DS14C232J/883 датащи(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали DS14C232J/883
подробное описание детали  Low Power 5V Powered TIA/EIA-232 Dual
PDF  12 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS14C232J/883 датащи(HTML) 4 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
For complete Military Product Specifications, refer to
the appropriate SMD or MDS.
Supply Voltage, V
CC
−0.3V to 6V
V
+ Pin
(V
CC − 0.3)V to +14V
V
− Pin
+0.3V to −14V
Driver Input Voltage
−0.3V to (V
CC + 0.3V)
Driver Output Voltage
(V
+ + 0.3V) to (V− − 0.3V)
Receiver Input Voltage
±25V
Receiver Output Voltage
−0.3V to (V
CC + 0.3V)
Maximum Package Power Dissipation @ 25˚C (Note 8)
J Package
1520 mW
E Package
2000 mW
Short Circuit Duration, D
OUT
Continuous
Storage Temp. Range
−65˚C to +150˚C
Lead Temp. (Soldering, 4 sec.)
+260˚C
ESD Rating
(HMB, 1.5 k
Ω, 100 pF)
≥ 2.5 kV
Recommended Operating
Conditions
Min
Max
Units
Supply Voltage, V
CC
4.5
5.5
V
Operating Free Air Temp. (T
A)
DS14C232E/J
−55
+125
˚C
Electrical Characteristics (Note 2)
Over recommended operating conditions, unless otherwise specified
Symbol
Parameter
Conditions
Min
Max
Units
DEVICE CHARACTERISTICS (C1–C4 = 1.0 µF)
I
CC
Supply (V
CC) Current
No Load
8.0
mA
DRIVER CHARACTERISTICS
V
IH
High Level Input Voltage
2V
V
IL
Low Level Input Voltage
0.8
V
I
IH
High Level Input Current
V
IN ≥ 2.0V
100
µA
I
IL
Low Level Input Current
V
IN = 0V
100
µA
V
OH
High Level Output Voltage
R
L = 3kΩ
5.0
V
V
OL
Low Level Output Voltage
R
L = 3kΩ
−5.0
V
I
OS+
Output High Short Circuit Current
V
O = 0V
(Note 3)
−25
mA
I
OS−
Output Low Short Circuit Current
V
O = 0V
25
mA
R
O
Output Resistance
−2V
≤ V
O ≤ +2V, TA = 25˚C,
300
Ω
V
CC = 0V = GND
RECEIVER CHARACTERISTICS (C1–C4 = 1.0 µF)
V
TH
Input High Threshold Voltage
3.0
V
V
TL
Input Low Threshold Voltage
0.2
V
V
HY
Hysteresis
T
A = 25˚C, +125˚C
0.1
1.0
V
T
A = −55˚C
0.05
1.0
V
R
IN
Input Resistance
V
IN = ±3V and ±15V, TA = 25˚C
3.0
7.0
k
Ω
V
OH
High Level Output Voltage
I
O = −3.2 mA
3.5
V
I
O = −20 µA
4.0
V
V
OL
Low Level Output Voltage
I
O = +3.2 mA
0.4
V
Switching Characteristics
Over recommended operating conditions, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Units
DRIVER CHARACTERISTICS (C1–C4 = 1.0 µF)
t
PLH
Propagation Delay Low to High
R
L = 3kΩ,CL = 50 pF
Figures 1, 2
4.0
µs
t
PHL
Propagation Delay High to Low
4.0
µs
t
SK
Skew |t
PLH −tPHL|
1.0
µs
SR1
Output Slew Rate
R
L = 3kΩ to7kΩ,CL = 2500 pF
(Note 7)
1.5
30
V/µs
RECEIVER CHARACTERISTICS (C1–C4 = 1.0 µF)
t
PLH
Propagation Delay Low to High
Input Pulse Width > 10 µs
8.0
µs
t
PHL
Propagation Delay High to Low
C
L = 50 pF
8.0
µs
t
SK
Skew |t
PLH −tPHL|(Figures 3, 4)
2.0
µs
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