UTRON

UT62256C

Rev. 1.0

32K X 8 BIT LOW POWER CMOS SRAM

____________________________________________________________________________________________

UTRON TECHNOLOGY INC.

P80027

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882

FAX: 886-3-5777919

2



ABSOLUTE MAXIMUM RATINGS*

PARAMETER

SYMBOL

RATING

UNIT

-0.5 to +7.0

V

Operating Temperature

0 to +70

℃

Storage Temperature

-65 to +150

℃

Power Dissipation

1

W

DC Output Current

50

mA

Soldering Temperature (under 10 sec0

Tsolder

260

℃

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for

extended period may affect device reliability.

TRUTH TABLE

MODE

CE

OE

WE

I/O OPERATION

SUPPLY CURRENT

Standby

H

X

X

High - Z

ISB, ISB1

Output Disable

L

H

H

High - Z

Read

L

L

H

Write

L

X

L

DC ELECTRICAL CHARACTERISTICS (VCC = 5V±10%, TA = 0℃ to 70℃)

PARAMETER

SYMBOL

TEST CONDITION

MIN. TYP.

MAX.

UNIT

Input High Voltage

2.2

-

VCC+0.5

V

Input Low Voltage

- 0.5

-

0.8

V

Input Leakage Current

- 1

-

1

µA

Output Leakage

Current

- 1

-

1

µA

Output High Voltage

2.4

-

-

V

Output Low Voltage

-

-

0.4

V

- 35

-

40

50

mA

-

30

40

mA

Tcycle

=500ns

-

-

20

mA

Operating Power

Supply Current

other pins at 0.2V or

Tcycle

=1ms

-

-

10

mA

1

10

mA

normal

-

0.3

5

mA

-L/-LL

-

-

3

mA

-L

-

2

100

µA

Standby Power

Supply Current

-LL

-

1

50

µA