2001 Nov 27

2

Philips Semiconductors

Product specification

UHF power LDMOS transistor

BLF647

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 800 MHz)

• Internal input damping for excellent stability over the

whole frequency range.

APPLICATIONS

• Communication transmitter applications in the

HF to 800 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

push-pull transistor in a SOT540A package with ceramic

cap. The common source is connected to the mounting

flange.

PINNING - SOT540A

PIN

DESCRIPTION

1

drain 1

2

drain 2

3

gate 1

4

gate 2

5

source, connected to flange

Fig.1 Simplified outline.

5

12

4

3

Top view

MBK777

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

MODE OF

OPERATION

f

(MHz)

(V)

(W)

(dB)

η

D

(%)

(dBc)

CW, class-AB

600

28

120

>14.5

>55

−

2-tone,

class-AB

28

120 (PEP)

>14.5

>40

≤−26

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±15

V

drain current (DC)

−

18

A

total power dissipation

−

290

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.