DMTH4004LPS datasheet(2/6 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated.

DMTH4004LPS

Document number: DS37767 Rev.2 - 2

2 of 6

www.diodes.com

October 2015

DMTH4004LPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 5)

TA = +25°C

TA = +70°C

Continuous Drain Current (Note 6)

TC = +25°C

100

TC = +70°C

(Note 8)

100

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10

s Pulse, Duty Cycle = 1%)

IDM

100

Avalanche Current, L=0.2mH

IAS

33.3

Avalanche Energy, L=0.2mH

EAS

110

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25C

2.6

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

°C/W

Total Power Dissipation (Note 6)

TC = +25C

138

Thermal Resistance, Junction to Case (Note 6)

RθJC

0.9

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 32V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

2.5

Ω

VGS = 10V, ID = 50A

—

VGS = 4.5V, ID = 50A

Diode Forward Voltage

VSD

—

0.9

1.2

VGS = 0V, IS = 50A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

4508

—

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

1648

—

Reverse Transfer Capacitance

Crss

—

104

—

Gate Resistance

—

0.7

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

34.6

—

VDD = 20V, ID = 30A

Total Gate Charge (VGS = 10V)

—

82.2

—

Gate-Source Charge

Qgs

—

9.9

—

Gate-Drain Charge

Qgd

—

11.2

—

Turn-On Delay Time

tD(ON)

—

5.9

—

VDD = 20V, VGS = 10V,

ID = 30A, RG = 1.6Ω

Turn-On Rise Time

—

13.3

—

Turn-Off Delay Time

tD(OFF)

—

25.9

—

Turn-Off Fall Time

—

7.9

—

Body Diode Reverse Recovery Time

tRR

—



48.4

—



IF = 50A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



72.4

—



Notes:

5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions

whilst operating in a steady state.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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