DMT5015LFDF datasheet(2/6 Pages) DIODES

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DMT5015LFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±16

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

9.1

7.3

t<10s

TA = +25°C

TA = +70°C

11.5

9.2

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

IDM

Continuous Source-Drain Diode Current

TA = +25°C

2.2

Avalanche Current (Note 7) L = 0.1mH

IAS

14.4

Avalanche Energy (Note 7) L = 0.1mH

EAS

10.4

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.82

TA = +70°C

0.52

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

153

°C/W

t<10s

Total Power Dissipation (Note 6)

TA = +25°C

1.97

TA = +70°C

1.2

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

Steady state

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250

μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 40V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±16V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

0.5

—

2.0

VDS = VGS, ID = 250

μA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 8A

—

VGS = 4.5V, ID = 6A

Diode Forward Voltage

VSD

—

0.7

1.0

VGS = 0V, IS = 5A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

902.7

—

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

301.4

—

Reverse Transfer Capacitance

Crss

—

15.2

—

Gate Resistance

—

1.9

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

6.1

—

VDS = 25V, ID = 8A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

Qgs

—

2.4

—

Gate-Drain Charge

Qgd

—

1.6

—

Turn-On Delay Time

tD(on)

—

2.8

—

VDS = 25V, VGS = 10V,

RG = 3

Ω, ID = 8A

Turn-On Rise Time

—

5.1

—

Turn-Off Delay Time

tD(off)

—

10.6

—

Turn-Off Fall Time

—

2.7

—

Reverse Recovery Time

trr

—

18.9

—

IF = 8A, di/dt = 100A/

μs

Reverse Recovery Charge

Qrr

—-

9.2

—

IF = 8A, di/dt = 100A/

μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMT5015LFDF

Datasheet number: DS37202 Rev. 4 - 2

2 of 6

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September 2014

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