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IXYN100N120C3 датащи(PDF) 2 Page - IXYS Corporation |
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IXYN100N120C3 датащи(HTML) 2 Page - IXYS Corporation |
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2 / 6 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYN100N120C3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 SOT-227B miniBLOC (IXYN) Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 60A, VCE = 10V, Note 1 30 52 S C ies 6000 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 353 pF C res 130 pF Q g(on) 270 nC Q ge I C = 100A, VGE = 15V, VCE = 0.5 • VCES 50 nC Q gc 93 nC t d(on) 32 ns t ri 90 ns E on 6.50 mJ t d(off) 123 ns t fi 110 ns E off 2.90 5.00 mJ t d(on) 32 ns t ri 90 ns E on 10.10 mJ t d(off) 140 ns t fi 125 ns E off 3.55 mJ R thJC 0.18 °C/W R thCS 0.05 °C/W Inductive load, T J = 25°C I C = 100A, VGE = 15V V CE = 0.5 • VCES, RG = 1Ω Note 2 Inductive load, T J = 125°C I C = 100A, VGE = 15V V CE = 0.5 • VCES, RG = 1Ω Note 2 PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. |
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