DMS3012SFG

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

30

—

—

V

μA

Zero Gate Voltage Drain Current

—

—

100

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.0

1.5

2.5

V

μA

Static Drain-Source On-Resistance

—

7.3

10

m

Ω

—

10

15

Forward Transfer Admittance

—

30

—

S

Diode Forward Voltage

—

0.45

0.55

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

1296

4310

pF

f = 1.0MHz

Output Capacitance

—

415

—

pF

Reverse Transfer Capacitance

—

204

—

pF

Gate Resistance

0.26

1.6

2.6

Ω

—

14.7

—

nC

—

31.6

—

nC

Gate-Source Charge

—

3.5

—

nC

Gate-Drain Charge

—

5.0

—

nC

Turn-On Delay Time

—

15.8

—

ns

Turn-On Rise Time

—

27.8

—

ns

Turn-Off Delay Time

—

29.7

—

ns

Turn-Off Fall Time

—

13.6

—

ns

Reverse Recovery Time

—

13.1

—

ns

A, di/dt = 100A/μs

Reverse Recovery Charge

—

4.3

—

nC

00A/μs

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

0

0.5

1

1.5

2

Fig. 4 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

10

15

20

25

30

5

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 4.0V

GS

1.0

1.5

2.0

2.5

3.0

0

5

10

15

20

25

30

Fig. 5 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

V

= 85°C

GS

V

= 125°C

GS

V

= 25°C

GS

V

= -55°C

GS

V

= 150°C

GS

V

= 5V

DS

POWERDI is a registered trademark of Diodes Incorporated.

DMS3012SFG

Document number: DS35441 Rev. 8 - 2

4 of 8

www.diodes.com

July 2014

© Diodes Incorporated