DMP6180SK3

Document number: DS36172 Rev. 3 - 2

4 of 6

www.diodes.com

July 2013

© Diodes Incorporated

DMP6180SK3

0.5

1

1.5

2

2.5

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

I = -1mA

D

I = -250µA

D

0

5

10

15

20

25

30

0

0.2 0.4 0.6 0.8

1

1.2 1.4 1.6 1.8

2

-V

, SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

10

100

1000

10000

0

5

10

15

20

25

30

35

40

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

DS

f = 1MHz

C

RSS

0

2

4

6

8

10

0

5

10

15

20

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate Charge Characteristics

G

V

= -30V

I = -12A

DS

D

0.001

0.01

0.1

1

10

100

1000

0.1

1

10

100

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

DS

R

Limited

DS(on)

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W