IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYA20N65B3 IXYP20N65B3

IXYH20N65B3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

8.5

14

S

C

826

pF

C

oes

V

66

pF

C

res

19

pF

Q

g(on)

29

nC

Q

ge

I

6

nC

Q

gc

14

nC

t

d(on)

12

ns

t

ri

25

ns

E

on

0.50

mJ

t

d(off)

103

ns

t

fi

87

ns

E

0.45

0.70

mJ

t

d(on)

13

ns

t

ri

26

ns

E

on

0.93

mJ

t

d(off)

124

ns

t

fi

147

ns

E

off

0.76

mJ

R

thJC

0.65 °C/W

R

thCS

TO-220

0.50

°C/W

R

thCS

TO-247

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

TO-263 Outline

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

1 - Gate

2,4 - Collector

3 - Emitter

TO-247 Outline

Pins: 1 - Gate

2 - Collector

3 - Emitter

TO-220 Outline

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.