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IXYA15N65C3D1 датащи(PDF) 2 Page - IXYS Corporation

номер детали IXYA15N65C3D1
подробное описание детали  Preliminary Technical Information
PDF  6 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYA15N65C3D1 датащи(HTML) 2 Page - IXYS Corporation

  IXYA15N65C3D1 Datasheet HTML 1Page - IXYS Corporation IXYA15N65C3D1 Datasheet HTML 2Page - IXYS Corporation IXYA15N65C3D1 Datasheet HTML 3Page - IXYS Corporation IXYA15N65C3D1 Datasheet HTML 4Page - IXYS Corporation IXYA15N65C3D1 Datasheet HTML 5Page - IXYS Corporation IXYA15N65C3D1 Datasheet HTML 6Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA15N65C3D1
IXYP15N65C3D1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 15A, VCE = 10V, Note 1
5.0
8.5
S
C
ies
583
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
52
pF
C
res
13
pF
Q
g(on)
19
nC
Q
ge
I
C = 15A, VGE = 15V, VCE = 0.5 • VCES
4
nC
Q
gc
10
nC
t
d(on)
15
ns
t
ri
20
ns
E
on
0.27
mJ
t
d(off)
68
ns
t
fi
28
ns
E
off
0.23
0.40
mJ
t
d(on)
15
ns
t
ri
21
ns
E
on
0.53
mJ
t
d(off)
80
ns
t
fi
42
ns
E
off
0.24
mJ
R
thJC
0.75 °C/W
R
thCS
TO-220
0.50
°C/W
Inductive load, T
J = 25°C
I
C = 15A, VGE = 15V
V
CE = 400V, RG = 20
Note 2
Inductive load, T
J = 150°C
I
C = 15A, VGE = 15V
V
CE = 400V, RG = 20
Note 2
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
V
F
I
F = 10A, VGE = 0V, Note 1
3.0
V
T
J = 125C
1.7
V
I
RM
2.5
A
t
rr
110
ns
t
rr
30
ns
R
thJC
1.85 °C/W
I
F = 12A, VGE = 0V,
-di
F/dt = 100A/μs, VR = 100V, TJ = 125°C
I
F = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.40
0.74
.016
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
8.00
8.89
.280
.320
E
9.65
10.41
.380
.405
E1
6.22
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.13
0
.005
TO-263 Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
TO-220 Outline
Pins: 1 - Gate
2,4 - Collector
3 - Emitter



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