IXTP8N65X2M datasheet(1/5 Pages) IXYS

номер детали	IXTP8N65X2M

подробное описание детали	Advance Technical Information

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

1 / 5 page

DS100668(6/15)

X2-Class

Power MOSFET

N-Channel Enhancement Mode

IXTP8N65X2M

V

DSS

= 650V

I

D25

= 4A

R

DS(on) 

 550m



Features



International Standard Package



Plastic Overmolded Tab



Low R

DS(ON) and QG



Avalanche Rated



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

650

V

GS(th)

V

DS = VGS, ID = 250μA

3.0

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 125C

150

A

R

DS(on)

V

GS = 10V, ID = 4A, Note 1

550 m



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

650

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

650

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C4

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

16

A

I

A

T

C = 25C4

A

E

AS

T

C = 25C

250

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

50

V/ns

P

D

T

C = 25C32

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque

1.13 / 10

Nm/lb.in

Weight

2.5

g

G = Gate

D = Drain

S = Source

OVERMOLDED

G

D S

(Electrically Isolated Tab)

Advance Technical Information

Аналогичный номер детали - IXTP8N65X2M

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXTP8N65X2M	306Kb / 2P	isc N-Channel MOSFET Transistor

More results

Аналогичное описание - IXTP8N65X2M

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFR64N50Q3	147Kb / 6P	Advance Technical Information
	IXGH10N300	232Kb / 5P	Advance Technical Information
	IXFK66N85X	202Kb / 5P	Advance Technical Information
	IXFN90N85X	134Kb / 5P	Advance Technical Information
	IXFT40N85XHV	264Kb / 6P	Advance Technical Information
	IXTR102N65X2	151Kb / 5P	Advance Technical Information
	IXYF40N450	184Kb / 4P	Advance Technical Information
	IXYH120N65C3	231Kb / 6P	Advance Technical Information
	IXYK120N120B3	164Kb / 2P	Advance Technical Information
	IXYX40N450HV	190Kb / 4P	Advance Technical Information

More results

IXTP8N65X2M датащи(PDF) 1 Page - IXYS Corporation

IXTP8N65X2M датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXTP8N65X2M

Аналогичное описание - IXTP8N65X2M

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL