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LM25101AM/NOPB датащи(PDF) 13 Page - Texas Instruments

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номер детали LM25101AM/NOPB
подробное описание детали  Half-Bridge Gate Drivers
PDF  26 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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LM25101AM/NOPB датащи(HTML) 13 Page - Texas Instruments

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1
10
100
1000
SWITCHING FREQUENCY (kHz)
0.001
0.010
0.100
CL = 4400 pF
CL = 0 pF
LM25101A, LM25101B, LM25101C
www.ti.com
SNVS859B – JULY 2012 – REVISED APRIL 2013
The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the
bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these
events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads
require more energy to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to
the half bridge result in higher reverse recovery losses. Figure 23 was generated based on calculations and lab
measurements of the diode recovery time and current under several operating conditions. This can be useful for
approximating the diode power dissipation.
The total IC power dissipation can be estimated from the previous plots by summing the gate drive losses with
the bootstrap diode losses for the intended application.
Figure 23. Diode Power Dissipation VIN = 50V
Copyright © 2012–2013, Texas Instruments Incorporated
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Product Folder Links: LM25101A LM25101B LM25101C



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