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CPC5602C датащи(PDF) 2 Page - IXYS Corporation

номер детали CPC5602C
подробное описание детали  N-Channel Depletion Mode FET
PDF  5 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC5602C датащи(HTML) 2 Page - IXYS Corporation

  CPC5602C Datasheet HTML 1Page - IXYS Corporation CPC5602C Datasheet HTML 2Page - IXYS Corporation CPC5602C Datasheet HTML 3Page - IXYS Corporation CPC5602C Datasheet HTML 4Page - IXYS Corporation CPC5602C Datasheet HTML 5Page - IXYS Corporation  
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INTEGRATED CIRCUITS DIVISION
www.ixysic.com
2
R10
CPC5602
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Gate-to-Source Off Voltage
V
GS(off)
I
D= 2µA, VDS=10V, VDS=100V
-2
-2.62
-3.6
V
Drain-to-Source Leakage Current
I
DS(off)
V
GS= -5V, VDS=190V
-
-
20
nA
V
GS= -5V, VDS=350V
-
-
1
A
Drain Current
I
D
V
GS= -2.7V, VDS=5V, VDS=50V
-
-
5
mA
V
GS= -0.57V, VDS=5V
130
-
-
mA
On-Resistance
R
DS(on)
V
GS= -0.35V, IDS=50mA
-
8
14
Gate Leakage Current
I
GSS
V
GS=10V, VGS=-10V
-
-
0.1
A
Gate Capacitance
C
ISS
V
DS= VGS=0V
-
-
300
pF
Electrical Characteristics @25oC (Unless Otherwise Specified)
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC
Thermal Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Thermal Resistance
RJC
-
-
-
14
ºC/W
Parameter
Symbol
Ratings
Units
Drain-to-Source Voltage
V
DS
350
V
Gate-to-Source Voltage
V
GS
±20
V
Total Package Dissipation
P
2.5
W
Operational Temperature
T
A
-40 to +85
oC
Storage Temperature
T
A
-40 to +125
oC



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