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CPC3982 датащи(PDF) 1 Page - IXYS Corporation |
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CPC3982 датащи(HTML) 1 Page - IXYS Corporation |
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1 / 5 page ![]() PRELIMINARY INTEGRATED CIRCUITS DIVISION PRELIMINARY DS-CPC3982-R00D 1 CPC3982 N-Channel Depletion-Mode Vertical DMOS FET V (BR)DSX / V (BR)DGX R DS(on) (max) I DSS (min) Package 800V 380 20mA SOT-23 Applications Features Description Ordering Information Circuit Symbol • Constant Current Regulator • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply • High Breakdown Voltage: 800V • Low V GS(off) Voltage: -1.4V to -3.1V • Depletion Mode Device Offers Low R DS(on) at Cold Temperatures • High Input Impedance • Small Package Size: SOT-23 The CPC3982 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3982 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3982 has a minimum breakdown voltage of 800V, and is available in an SOT-23 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Package Pinout S G D Part # Description CPC3982TTR N-Channel Depletion Mode FET, SOT-23 Pkg. Tape and Reel (3000/Reel) (SOT-23) 1 2 3 S G D |
Аналогичный номер детали - CPC3982 |
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Аналогичное описание - CPC3982 |
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