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TIC216D датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали TIC216D
подробное описание детали  isc Triacs
PDF  1 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIC216D датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc Triacs
TIC216D
FEATURES
·
With TO-220 package
·
Sensitive Gate Triacs
·
Glass Passivated
·
Max IGT of 5 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
400
V
VRRM
Repetitive peak reverse voltage
400
V
IT(RMS)
RMS on-state current (full sine wave)TC=70℃
6
A
ITSM
Non-repetitive peak on-state current
60
A
Tj
Operating junction temperature
110
℃
Tstg
Storage temperature
-45~150
℃
Rth(j-c)
Thermal resistance, junction to case
2.5
℃
/W
Rth(j-a)
Thermal resistance, junction to ambient
62.5
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
IDRM
Repetitive peak off-state current
VD=VDRM, TC=110℃
2.0
mA
IGT
Gate trigger current
Ⅰ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
5
mA
Ⅱ
5
Ⅲ
5
Ⅳ
10
IH
Holding current
Vsupply = 12 V†, IG= 0 initial ITM= 100mA
30
mA
VGT
Gate trigger voltage
Ⅰ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
2.2
V
Ⅱ
2.2
Ⅲ
2.2
Ⅳ
3.0
VTM
On-state voltage
IT= 8.4A; IG= 50mA
1.7
V


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