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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DMP4047SSD датащи(PDF) 2 Page - Diodes Incorporated |
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DMP4047SSD датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  DMP4047SSD Document Number DS36353 Rev. 3 - 2 2 of 5 www.diodes.com September 2013 © Diodes Incorporated DMP4047SSD Maximum Ratings (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25°C TA = +70°C ID -5.1 -4.1 A t < 10s TA = +25°C TA = +70°C ID -6.5 -5.2 A Continuous Drain Current (Note 7) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -4.6 -3.7 A t < 10s TA = +25°C TA = +70°C ID -5.9 -4.7 A Maximum Body Diode Continuous Current IS -2.5 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -40 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 1.3 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 98 °C/W t < 10s 59 Total Power Dissipation (Note 7) TA = +25°C PD 1.8 W TA = +70°C 1.1 Thermal Resistance, Junction to Ambient (Note 7) Steady state RθJA 71 °C/W t < 10s 43 Thermal Resistance, Junction to Case (Note 7) RθJC 11.8 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -40 V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS -1 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1.0 -3.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) 33 45 mΩ VGS = -10V, ID = -4.4A 40 55 VGS = -4.5V, ID = -3.7A Diode Forward Voltage VSD -0.75 -1.2 V VGS = 0V, IS = -3.9A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 1154 pF VDS = -20V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 84 pF Reverse Transfer Capacitance Crss 66 pF Gate Resistance RG 12.6 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg 10.6 nC VDS = -20V, ID = -4.9A Total Gate Charge (VGS = -10V) Qg 21.5 nC Gate-Source Charge Qgs 2.2 nC Gate-Drain Charge Qgd 3.3 nC Turn-On Delay Time tD(on) 8.7 ns VDS = -20V, ID = -3.9A VGS = 4.5V, RG = 1Ω Turn-On Rise Time tr 19.6 ns Turn-Off Delay Time tD(off) 34.9 ns Turn-Off Fall Time tf 25.5 ns Body Diode Reverse Recovery Time trr 9.61 ns IF = -3.9A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr 3.3 nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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