DS96F173MQML, DS96F175MQML

SNOSAS9A – APRIL 2011 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)

Lead Temperature (Soldering, 60 sec.)

300°C

CDIP (NFE)

1,500 mW

CDIP (NAD)

1,034 mW

LCCC (NAJ)

1,500 mW

Supply Voltage

7.0V

Input Voltage, A or B Inputs

±25V

Differential Input Voltage

±25V

Enable Input Voltage

7.0V

Low Level Output Current

50 mA

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the

Electrical Characteristics--DC Parameters. The ensured specifications apply only for the test conditions listed. Some performance

characteristics may degrade when the device is not operated under the listed test conditions.

(2)

Recommended Operating Conditions

Min

Max

Units

4.50

5.50

V

−7

+12

V

−7

+12

V

−400

μA

16

mA

−55

125

°C

Quality Conformance Inspection

Mil-Std-883, Method 5005 - Group A

Subgroup

Description

Temp (°C)

1

Static tests at

+25

2

Static tests at

+125

3

Static tests at

-55

4

Dynamic tests at

+25

5

Dynamic tests at

+125

6

Dynamic tests at

-55

7

Functional tests at

+25

8A

Functional tests at

+125

8B

Functional tests at

-55

9

Switching tests at

+25

10

Switching tests at

+125

11

Switching tests at

-55

12

Settling time at

+25

13

Settling time at

+125

14

Settling time at

-55

4

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