CSD18542KCS datasheet(3/11 Pages) TI1

3 / 11 page

CSD18542KCS

www.ti.com

SLPS557 – JUNE 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 48 V

μA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, ID = 250 μA

1.5

1.8

2.2

VGS = 4.5 V, ID = 100 A

4.0

5.1

Ω

RDS(on)

Drain-to-source on-resistance

VGS = 10 V, ID = 100 A

3.3

4.0

Ω

gfs

Transconductance

VDS = 30 V, ID = 100 A

198

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

3900

5070

Coss

Output capacitance

VGS = 0 V, VDS = 30 V, ƒ = 1 MHz

570

740

Crss

Reverse transfer capacitance

Series gate resistance

1.3

2.6

Ω

Gate charge total (4.5 V)

Gate charge total (10 V)

Qgd

Gate charge gate-to-drain

VDS = 30 V, ID = 100 A

6.9

Qgs

Gate charge gate-to-source

Qg(th)

Gate charge at Vth

7.3

Qoss

Output charge

VDS = 30 V, VGS = 0 V

td(on)

Turn on delay time

Rise time

VDS = 30 V, VGS = 10 V,

IDS = 100 A, RG = 0 Ω

td(off)

Turn off delay time

Fall time

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 100 A, VGS = 0 V

0.9

1.0

Qrr

Reverse recovery charge

148

VDS= 30 V, IF = 100 A,

di/dt = 300 A/

μs

trr

Reverse recovery time

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-case thermal resistance

0.6

°C/W

RθJA

Junction-to-ambient thermal resistance

°C/W

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