CSD15380F3 datasheet(3/14 Pages) TI1

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CSD15380F3

www.ti.com

SLPS579 – MAY 2016

Product Folder Links: CSD15380F3

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5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = 250 μA

IDSS

Drain-to-Source leakage current

VGS = 0 V, VDS = 16 V

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 10 V

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = 2.5 μA

0.85

1.10

1.35

RDS(on)

Drain-to-source on-resistance

VGS = 2.5 V, IDS = 0.1 A

2220

4000

Ω

VGS = 4.5 V, IDS = 0.1 A

1170

1460

Ω

VGS = 8 V, IDS = 0.1 A

990

1190

Ω

gfs

Transconductance

VDS = 2 V, IDS = 0.1 A

0.64

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = 10 V,

ƒ = 1 MHz

8.1

10.5

Coss

Output capacitance

5.9

7.7

Crss

Reverse transfer capacitance

0.13

0.17

Series gate resistance

9.6

Ω

Gate charge total (4.5 V)

VDS = 10 V, IDS = 0.1 A

0.216

0.281

Qgd

Gate charge gate-to-drain

0.027

Qgs

Gate charge gate-to-source

0.077

Qg(th)

Gate charge at Vth

0.048

td(on)

Turn on delay time

VDS = 10 V, VGS = 4.5 V,

IDS = 0.1 A, RG = 0 Ω

Rise time

td(off)

Turn off delay time

Fall time

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 0.1 A, VGS = 0 V

0.85

(1)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

°C/W

Junction-to-ambient thermal resistance(2)

255

°C/W

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