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CSD13302W датащи(PDF) 5 Page - Texas Instruments

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номер детали CSD13302W
подробное описание детали  CSD13302W 12 V N Channel NexFET??Power MOSFET
PDF  12 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD13302W датащи(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (GC)
-75
-50
-25
0
25
50
75
100
125
150
175
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
D006
VGS - Gate-To-Source Voltage (V)
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
35
D007
TC = 25°C, I D = 1 A
TC = 125°C, I D = 1 A
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
10
12
10
100
1000
10000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
Qg - Gate Charge (nC)
0
1
2
3
4
5
6
7
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
D004
VGS - Gate-To-Source Voltage (V)
0.6
1
1.4
1.8
2.2
2.6
3
0
10
20
30
40
50
60
D003
TC = 125°C
TC = 25°C
TC = -55°C
VDS - Drain-to-Source Voltage (V)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
2
4
6
8
10
12
14
16
18
20
D002
VGS = 2.5 V
VGS = 3.5 V
VGS = 4.5 V
CSD13302W
www.ti.com
SLPS535 – MARCH 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
ID = 1 A
VDS = 6 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = 250 µA
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 6. Threshold Voltage vs Temperature
Copyright © 2015, Texas Instruments Incorporated
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Product Folder Links: CSD13302W



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