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BUX43 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX43 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUX43 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 325 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A 1.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A ;IB= 1A 2.0 V ICEO Collector Cutoff Current VCE= 260V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 400V;VBE= -1.5V VCE= 400V;VBE= -1.5V;TC=125℃ 1.5 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 3A; VCE= 4V 15 60 hFE-2 DC Current Gain IC= 5A; VCE= 4V 8 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 15V 8 MHz Switching Times ton Turn-on Time IC= 5A; IB1= -IB2= 1A; VCC= 150V, RC= 30Ω 1.0 μs ts Storage Time 2.2 μs tf Fall Time 0.9 μs |
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