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BUL58B датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали BUL58B
подробное описание детали  isc Silicon NPN Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL58B датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BUL58B
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
250
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
0.2
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
0.6
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
1.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
1.1
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
1.4
V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
100
μA
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
VCB= 250V; IE= 0, TC= 125℃
10
100
μA
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
VEB= 9V; IC= 0, TC= 125℃
10
100
μA
hFE-1
DC Current Gain
IC= 0.3A; VCE= 4V
30
80
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
25
60
hFE-3
DC Current Gain
IC= 5A; VCE= 1V
5
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
44
pF
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 4V
20
MHz



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