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BUL49D датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали BUL49D
подробное описание детали  isc Silicon NPN Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL49D датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
2
isc website：www.iscsemi.cn
isc Silicon NPN Power Transistor
BUL49D
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; L= 25mH
450
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
10
18
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
0.3
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
0.6
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
1.2
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
1.3
V
ICES
Collector Cutoff Current
VCE= 850V; VBE= 0
VCE= 850V; VBE= 0, TC= 125℃
0.1
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
0.1
mA
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
60
hFE-3
DC Current Gain
IC= 7A; VCE= 10V
4
10
VF
Diode Forward Voltage
IC= 3A
1.5
V
Switching Times, Resistive Load
ts
Storage Time
IC= 2A; VCC= 250V;
IB1= -IB2= 0.4A
3
μs
tf
Fall Time
0.8
μs
Switching Times, Inductive Load
ts
Storage Time
IC= 4A; IB1= 0.8A
VBE(off)= -5V; RBB= 0Ω
VCL= 300V; L= 1mH
1.3
μs
tf
Fall Time
0.1
μs



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