IRFZ34N datasheet(1/2 Pages) ISC

номер детали	IRFZ34N

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRFZ34N

FEATURES

·Advanced Process Technology

·Dynamic dv/dt Rating

·175

°C Operating Temperature

·Fast Switching

·Fully Avalanche Rated

DESCRIPTION

·Designed for use in switch mode power supplies and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

55

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

26

A

IDM

Drain Current-Single Pluse

100

A

PD

Total Dissipation @TC=25℃

56

W

TJ

Max. Operating Junction Temperature

-55~175

℃

Tstg

Storage Temperature

-55~175

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

2.7

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62

℃/W

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Аналогичный номер детали - IRFZ34N

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRFZ34N	195Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
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