IRF820 datasheet(1/2 Pages) ISC

номер детали	IRF820

подробное описание детали	isc N-Channel MOSFET Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc N-Channel MOSFET Transistor

IRF820

DESCRIPTION

·Drain Current

–I

D= 2.5A@ TC=25℃

·Drain Source Voltage-

: VDSS= 500V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 3Ω(Max)

·Fast Switching Speed

·Simple Drive Requirements

APPLICATIONS

·High current,high speed switching

· Swith mode power supplies(smps)

·DC-AC converters for welding equipmentand uninterruptible power

supplies and motor driver

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

2.5

A

PD

Power Dissipation@TC=25℃

80

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.56

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃/W

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